LX Semicon's ceramic substrate has the special feature of high bending strength, 'Void Free' bonding layer, and low thickness variation applying diffrentiated bonding process from conventional bonding process. LX Semicon provides excellent thermal conductivity and high thermal, mechanical reliability for various fields.
Si3N4 Ceramic Substrate : High Thermal Conductivity & Strength
AlN Ceramic Substrate : High Thermal Conductivity
LX Semicon's ceramic substrate is manufactured through a differentiated diffusion bonding process. The diffusion bonding process is the developed technology that forms very thin and homogeneous metal – ceramic reaction layer through vapor deposition without brazing paste. It has a high bending strength, low total thickness variation, as well as high thermal, mechanical reliability, it can be applied in various industrial fields (e.g., electric vehicles, renewable energy auto-regulation, etc.).
- High Bending strength
- Low Thickness Variation
- Void Free
- High thermal, mechanical Reliability
|Total Thickness||Very Good|
|Metal/ceramic reaction layer thickness||< 1 ㎛||15 ㎛|
|Total thickness variation||± 5 %||± 10 %|
|Void||Free||< 1 %
(Dia. 1 mm)
Power Supply Unit
Energy Storage System