Electronic Ceramic Substrate
Product
Si3N4 Ceramic Substrate : High Thermal Conductivity & Strength
AlN Ceramic Substrate : High Thermal Conductivity
Features
LX Semicon's ceramic substrate is manufactured through a differentiated diffusion bonding process.
The diffusion bonding process is the developed technology that forms very thin and homogeneous metal – ceramic reaction layer through
vapor deposition without brazing paste. It has a high bending strength, low total thickness variation, as well as
high thermal, mechanical reliability, it can be applied in various industrial fields (e.g., electric vehicles, renewable energy auto-regulation, etc.).
-
- High Bending strength
- Low Thickness Variation
- Void Free
- High thermal,
mechanical Reliability
Bending Strength | Void Free | Total Thickness | TCT | Peel Strength |
---|---|---|---|---|
Excellent | Excellent | Very Good | Good | Good |
Properties | LX-DBC | Competitor |
---|---|---|
Metal/ceramic reaction layer thickness | < 1 ㎛ | 15 ㎛ |
Total thickness variation | ± 5 % | ± 10 % |
Void | Free | < 1 % (Dia. 1 mm) |
Applicable Fields
-
Electric Vehicle
-
EV Charger
-
Rail
-
Renewable
Energy System -
Power Supply Unit
-
Energy Storage
System