Electronic Ceramic Substrate
Si3N4 Ceramic Substrate : High Thermal Conductivity & Strength
AlN Ceramic Substrate : High Thermal Conductivity
LX Semicon's ceramic substrate is manufactured through a differentiated diffusion bonding process.
The diffusion bonding process is the developed technology that forms very thin and homogeneous metal – ceramic reaction layer through
vapor deposition without brazing paste. It has a high bending strength, low total thickness variation, as well as
high thermal, mechanical reliability, it can be applied in various industrial fields (e.g., electric vehicles, renewable energy auto-regulation, etc.).
- High Bending strength
- Low Thickness Variation
- Void Free
- High thermal,
|Bending Strength||Void Free||Total Thickness||TCT||Peel Strength|
|Metal/ceramic reaction layer thickness||< 1 ㎛||15 ㎛|
|Total thickness variation||± 5 %||± 10 %|
|Void||Free||< 1 % (Dia. 1 mm)|
Power Supply Unit